Название продукции:(4-methoxy-3,5-dimethylphenyl)dimethylsulfonium bis((perfluorobutyl)sulfonyl)amide
IUPAC Name:(4-methoxy-3,5-dimethylphenyl)dimethylsulfanium; 1,1,1,2,2,3,3,4,4-nonafluoro-4-{[(1,1,2,2,3,3,4,4,4-nonafluorobutanesulfonyl)azanidyl]sulfonyl}butane
- CAS：2222384-16-7
- Молекулярная формула：C19H17F18NO5S3
- Чистота：95%+
- Номер в каталоге：CM1043806
- Молекулярная масса：777.5
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Информация о продукции
- Номер CAS:2222384-16-7
- Молекулярная формула:C19H17F18NO5S3
- Точка плавления:-
- Smiles-код:CC1=CC(=CC(=C1OC)C)[S+](C)C.C(C(C(F)(F)S(=O)(=O)[N-]S(=O)(=O)C(C(C(C(F)(F)F)(F)F)(F)F)(F)F)(F)F)(C(F)(F)F)(F)F
- Плотность:
- Номер в каталоге:CM1043806
- Молекулярная масса:777.5
- Точка кипения:
- Номер Mdl:
- Хранение:
Category Infos
- Photoresist
- Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.
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