Название продукции:2,2,3,3,4,4,4-heptafluorobutyl 2-methylprop-2-enoate
IUPAC Name:2,2,3,3,4,4,4-heptafluorobutyl 2-methylprop-2-enoate
- CAS：13695-31-3
- Молекулярная формула：C8H7F7O2
- Чистота：95%+
- Номер в каталоге：CM336894
- Молекулярная масса：268.13
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Информация о продукции
- Номер CAS:13695-31-3
- Молекулярная формула:C8H7F7O2
- Точка плавления:-
- Smiles-код:C=C(C)C(OCC(F)(F)C(F)(F)C(F)(F)F)=O
- Плотность:
- Номер в каталоге:CM336894
- Молекулярная масса:268.13
- Точка кипения:
- Номер Mdl:MFCD00039251
- Хранение:
Category Infos
- Fluorinated Compounds
- Fluorine is the most electronegative element in the periodic table, and the fluorine atom has a small atomic radius, so fluorine-containing organic compounds have many wonderful properties. For example, the introduction of fluorine atoms or fluorine-containing groups into drug molecules can improve the permeability to cell membranes, metabolic stability and bioavailability; in addition, the introduction of fluorine atoms will improve the lipid solubility of the compound and promote its absorption in the body. The speed of delivery changes the physiological effect. In the field of medicinal chemistry, the introduction of fluorine atoms into organic molecules is an important direction for the development of new anticancer drugs, antitumor drugs, antiviral agents, anti-inflammatory drugs, and central nervous system drugs.
- Photoresist
- Semiconductors could be termed as the most extensively utilized substance in the modern century. Polycrystalline wafers are used to make semiconductors. A single 300-mm silicon wafer may create hundreds of chips. Photoresist coatings and materials are an essential part of their fabrication as they are the main constituents of the photolithography process during the fabrication of the semiconductors. Photoresist is a mixed liquid that is sensitive to light. Its components include: photoinitiators (including photosensitizers, photoacid generators), photoresist resins, monomers, solvents and other additives. The photoresist can transfer the required fine pattern from the photomask (mask) to the substrate to be processed through photochemical reaction and photolithography processes such as exposure and development.
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